LM8050J
LM8050I, LM8050J
Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Total Device Dissipation @ TA = 25°C Derate above 25°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol VCEO VCBO VEBO IC PD
TJ, Tstg
Symbol RθJA RθJC
Value 25 30 6.0 800
Unit Vdc Vdc Vdc m Adc
625 m W 5.0 m W/°C
1.5 12
- 55 to +150
Watts m W/°C
°C
Max Unit 200 °C/W
83.3 °C/W http://onsemi. COLLECTOR 3
2 BASE
1 EMITTER
1 23 TO- 92 CASE 29 STYLE 1
MARKING DIAGRAMS
LM 8050x YWW
LM8050x = Specific Device Code x = I or J Y = Year WW = Work Week
ORDERING INFORMATION
Device
Package
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