MBR30H60CTG Datasheet - ON Semiconductor

MBR30H60CTG SWITCHMODE Power Rectifier

MBR30H60CTG Features

* Low Forward Voltage

* Low Power Loss/High Efficiency

* High Surge Capacity

* 175C Operating Junction Temperature

* 30 A Total (15 A Per Diode Leg)

* Guard

* Ring for Stress Protection

* AEC

* Q101 Qualified and PPAP Capable

* NRVBB Prefix for Automotive

Datasheet Details

MBR30H60CTG

227.88 KB

Switchmode power rectifier.

📁 Related Datasheet

MBR30H60CT Dual Common Cathode Schottky Rectifier (Vishay Siliconix)

MBR30H60PT Dual Common-Cathode Schottky Rectifier (Vishay)

MBR30H100C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER (Diodes)

MBR30H100C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER (BCD)

MBR30H100CT Schottky Barrier Rectifier (Inchange Semiconductor)

MBR30H100CT Dual Common Cathode High Voltage Schottky Rectifier (Vishay Siliconix)

MBR30H100CT SWITCHMODE Power Rectifier (ON Semiconductor)

MBR30H100CT Dual Common Cathode Schottky Rectifier (Taiwan Semiconductor)

TAGS

MBR30H60CTG Distributor