MBR30H60CTG Datasheet - ON Semiconductor

Features

* Low Forward Voltage

* Low Power Loss/High Efficiency

* High Surge Capacity

* 175C Operating Junction Temperature

* 30 A Total (15 A Per Diode Leg)

* Guard

* Ring for Stress Protection

* AEC

* Q101 Qualified and PPAP Capable

* NRVBB Prefix for Automotive