MBRM110ET1G Datasheet - ON Semiconductor

MBRM110ET1G Surface Mount Schottky Power Rectifier

MBRM110ET1G, NRVBM110ET1G Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky POWERMITE employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the POWERMITE has the same thermal performance as the.

MBRM110ET1G Features

* Low IR Extends Battery Life

* Low Profile

* Maximum Height of 1.1 mm

* Small Footprint

* Footprint Area of 8.45 mm2

* 150C Operating Junction Temperature

* Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink

* ESD Ratings: 

MBRM110ET1G-ONSemiconductor.pdf