MJE5731 - 1.0 AMPERE POWER TRANSISTORS
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE5730/D
High Voltage PNP Silicon Power Transistors
. . . designed for line operated .
MJE5731 - High Voltage PNP Silicon Plastic Power Transistors
(ON Semiconductor)
MJE5730, MJE5731, MJE5731A
High Voltage PNP Silicon Plastic Power Transistors
These devices are designed for line operated audio output amplifier, sw.
MJE5731 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -350V(Min) ·DC current gain -
: hFE = 30~150@ IC= -0.
MJE5731A - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -400V(Min) ·DC current gain -
: hFE = 30~150@ IC= -0.
MJE5731A - 1.0 AMPERE POWER TRANSISTORS
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE5730/D
High Voltage PNP Silicon Power Transistors
. . . designed for line operated .
MJE5730 - High Voltage PNP Silicon Plastic Power Transistors
(ON Semiconductor)
MJE5730, MJE5731, MJE5731A
High Voltage PNP Silicon Plastic Power Transistors
These devices are designed for line operated audio output amplifier, sw.
MJE5730 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -300V(Min) ·DC current gain -
: hFE = 30~150@ IC= -0.
MJE5730 - 1.0 AMPERE POWER TRANSISTORS
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE5730/D
High Voltage PNP Silicon Power Transistors
. . . designed for line operated .