Description
These devices consist of a gallium arsenide infrared emitting diode
optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package.They are ideally suited for high
density applications, and eliminate the need for through
the
board mounting.
Features
- Closely Matched Current Transfer Ratios Minimum BVCEO of 70 V
Guaranteed.
- MOC205M, MOC206M, MOC207M.
- Minimum BVCEO of 30 V Guaranteed.
- MOC211M, MOC212M, MOC213M, MOC216M, MOC217M.
- Low LED Input Current Required for Easier Logic Interfacing.
- MOC216M, MOC217M.
- Convenient Plastic SOIC.
- 8 Surface Mountable Package Style, with
0.050” Lead Spacing.
- Safety and Regulatory Approvals:.
- UL1577, 2,500 VACRMS for 1 Minut.