* Avalanche Energy Specified
* Source
* to
* Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
* Diode is Characterized for Use in Bridge Circuits
* IDSS and VDS(on) Specified at Elevated Temperature
* Short Heatsink Tab Manufa
MVB50P03HDLT4G Datasheet (135.92 KB)
MVB50P03HDLT4G
135.92 KB
P-channel power mosfet.
MTB50P03HDL, MVB50P03HDLT4G P-Channel Power MOSFET 50 A, 30 V, Logic Level D2PAK This Power MOSFET is designed to withstand high energy in the avalan.
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