MVB50P03HDLT4G Datasheet - ON Semiconductor

MVB50P03HDLT4G P-Channel Power MOSFET

MTB50P03HDL, MVB50P03HDLT4G P-Channel Power MOSFET 50 A, 30 V, Logic Level D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe .

MVB50P03HDLT4G Features

* Avalanche Energy Specified

* Source

* to

* Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

* Diode is Characterized for Use in Bridge Circuits

* IDSS and VDS(on) Specified at Elevated Temperature

* Short Heatsink Tab Manufa

MVB50P03HDLT4G Datasheet (135.92 KB)