NGTB10N60R2DT4G

IGBT

ON Semiconductor

* Reverse Conducting II IGBT

* IGBT VCE(sat)=1.7V (typ) [IC=10A, VGE=15V]

* IGBT tf=65ns (typ)

* Diode VF=1.5V (typ) [IF=10A]

* Diode trr=90ns (typ)

* 5s Short Circuit Capability Applications

* General Purpose Inverter Electrical Connection N-Channel 2,4 1 1:Gate 2:Coll

NGTB10N60R2DT4G

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Igbt.

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NGTB10N60R2DT4G IGBT ON Semiconductor

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