NGTB10N60R2DT4G Datasheet, Igbt, ON Semiconductor

NGTB10N60R2DT4G Features

• Igbt
• Reverse Conducting II IGBT
• IGBT VCE(sat)=1.7V (typ) [IC=10A, VGE=15V]
• IGBT tf=65ns (typ)
• Diode VF=1.5V (typ) [IF=10A]
• Diode trr=90ns (t

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NGTB10N60R2DT4G

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ON Semiconductor ↗

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📄 Datasheet

Description:

Igbt.

NGTB10N60R2DT4G Application

• Applications
• General Purpose Inverter Electrical Connection N-Channel 2,4 1 1:Gate 2:Collector 3:Emitter 3 4:Collector Specifications Ab

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NGTB10N60R2DT4G

ON Semiconductor

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