Datasheet Details
- Part number
- NGTB10N60R2DT4G
- Manufacturer
- ON Semiconductor ↗
- File Size
- 580.80 KB
- Datasheet
- NGTB10N60R2DT4G-ONSemiconductor.pdf
- Description
- IGBT
NGTB10N60R2DT4G Description
NGTB10N60R2DT4G IGBT 600V, 10A, N-Channel www.onsemi.com .
NGTB10N60R2DT4G Features
* Reverse Conducting II IGBT
* IGBT VCE(sat)=1.7V (typ) [IC=10A, VGE=15V]
* IGBT tf=65ns (typ)
* Diode VF=1.5V (typ) [IF=10A]
* Diode trr=90ns (typ)
NGTB10N60R2DT4G Applications
* General Purpose Inverter
Electrical Connection
N-Channel 2,4
1 1:Gate 2:Collector 3:Emitter
3 4:Collector
Specifications
Absolute Maximum Ratings at Ta=25C, Unless otherwise specified
Parameter
Collector to Emitter Voltage
Gate to Emitter Voltage Collector Current (DC) Limited by Tjmax
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