Part number:
NGTB30N135IHRWG
Manufacturer:
File Size:
176.49 KB
Description:
Igbt.
NGTB30N135IHRWG Datasheet (176.49 KB)
* a robust and cost effective Field Stop (FS) Trench construction, provides superior performance in demanding switching applications, and offers low on
* state voltage with minimal switching losses. The IGBT is well suited for resonant or soft switching applications. Features
* Extremel
NGTB30N135IHRWG Datasheet (176.49 KB)
NGTB30N135IHRWG
176.49 KB
Igbt.
📁 Related Datasheet
NGTB30N135IHR1WG - IGBT
(ON Semiconductor)
NGTB30N135IHR1WG
IGBT with Monolithic Free Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field S.
NGTB30N120FL2WG - IGBT
(ON Semiconductor)
NGTB30N120FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construc.
NGTB30N120IHLWG - IGBT
(ON Semiconductor)
NGTB30N120IHLWG IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provi.
NGTB30N120IHRWG - IGBT
(ON Semiconductor)
NGTB30N120IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Sto.
NGTB30N120IHSWG - IGBT
(ON Semiconductor)
NGTB30N120IHSWG IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provi.
NGTB30N120L2WG - IGBT
(ON Semiconductor)
NGTB30N120L2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construct.
NGTB30N120LWG - IGBT
(ON Semiconductor)
NGTB30N120LWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provid.
NGTB30N140IHR3WG - IGBT
(ON Semiconductor)
IGBT with Monolithic Free Wheeling Diode
NGTB30N140IHR3WG
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective ultra Fi.
