NGTB30N140IHR3WG Datasheet, Igbt, ON Semiconductor

NGTB30N140IHR3WG Features

• Igbt a robust and cost effective ultra Field Stop (FS) Trench construction and provides superior performance. It is especially designed for low on
• state and is well suited for resona

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NGTB30N140IHR3WG

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ON Semiconductor ↗

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📄 Datasheet

Description:

Igbt.

NGTB30N140IHR3WG Application

• Applications The device contains a reverse conducting diode integrated on the same die, which makes the device construction very cost effective. Fe

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NGTB30N140IHR3WG

ON Semiconductor

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