NSBA115EDXV6T1G Datasheet - ON Semiconductor

NSBA115EDXV6T1G Dual PNP Bias Resistor Transistors

MUN5136DW1, NSBA115EDXV6 Dual PNP Bias Resistor Transistors R1 = 100 kW, R2 = 100 kW PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The BRT eliminates these individual components by integrating.

NSBA115EDXV6T1G Features

* S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

* Simplifies Circuit Design

* Reduces Board Space

* Reduces Component Count

* These Devices are Pb

* Free,

NSBA115EDXV6T1G Datasheet (110.22 KB)