NSBC123TDP6 Datasheet - ON Semiconductor

NSBC123TDP6 Dual NPN Bias Resistor Transistors

NSBC123TDP6 Dual NPN Bias Resistor Transistors R1 = 2.2 kW, R2 = 8 kW NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The BRT eliminates these individual components by integrating them into a si.

NSBC123TDP6 Features

* S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

* Simplifies Circuit Design

* Reduces Board Space

* Reduces Component Count

* These Devices are Pb

* Free,

NSBC123TDP6-ONSemiconductor.pdf