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NTLJD3119C Power MOSFET

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Description

MOSFET * Power, Complementary, WDFN 2X2 mm 20 V/-20 V, 4.6 A/-4.1 A NTLJD3119C .

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Features

* Complementary N
* Channel and P
* Channel MOSFET
* WDFN Package with Exposed Drain Pad for Excellent Thermal Conduction
* Footprint Same as SC
* 88 Package
* Leading Edge Trench Technology for Low On Resistance
* 1.8 V Gate Threshold Voltag

Applications

* Synchronous DC
* DC Conversion Circuits
* Load/Power Management of Portable Devices like PDA’s, Cellular Phones and Hard Drives
* Color Display and Camera Flash Regulators DATA SHEET www. onsemi. com V(BR)DSS N
* Channel 20 V P
* Channel
* 20 V RDS

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