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NTLJD3119C - Power MOSFET

ON Semiconductor

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Datasheet Details

Part number	NTLJD3119C
Manufacturer	ON Semiconductor ↗
File Size	206.76 KB
Description	Power MOSFET
Datasheet	NTLJD3119C_ONSemiconductor.pdf

NTLJD3119C Product details

Features

Complementary N.
Channel and P.
Channel MOSFET.
WDFN Package with Exposed Drain Pad for Excellent Thermal Conduction.
Footprint Same as SC.
88 Package.
Leading Edge Trench Technology for Low On Resistance.
1.8 V Gate Threshold Voltage.
Low Profile (< 0.8 mm) for Easy Fit in Thin Environments.
This is a Pb.
Free Device.

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Published: Jan 17, 2007 |