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NTLLD4951NF Dual N-Channel Power MOSFET

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Description

NTLLD4951NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 11 A / Low Side 13 A, Dual N *Channel, WDFN (3 mm x 3 mm) Feat.

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Features

* Co
* Packaged Power Stage Solution to Minimize Board Space
* Low Side MOSFET with Integrated Schottky
* Minimized Parasitic Inductances
* Optimized Devices to Reduce Power Losses
* These Devices are Pb
* Free, Halogen Free/BFR Free and are RoHS C

Applications

* DC
* DC Converters
* System Voltage Rails
* Point of Load http://onsemi. com V(BR)DSS Q1 Top FET 30 V Q2 Bottom FET 30 V RDS(ON) MAX 17.4 mW @ 10 V 25 mW @ 4.5 V 13.3 mW @ 10 V 20 mW @ 4.5 V ID MAX 11 A 13 A D1 (2, 3, 4, 9) (1) G1 S1/D2 (10) © Semiconductor Com

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