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NTMD6601NR2G Power MOSFET

NTMD6601NR2G Description

NTMD6601NR2G Power MOSFET 80 V, 2.2 A, Dual N-Channel, SO-8 .

NTMD6601NR2G Features

* ăLow RDS(on) to Minimize Conduction Losses
* ăLow Capacitance to Minimize Driver Losses
* ăOptimized Gate Charge to Minimize Switching Losses
* ăDual SO-8 Surface Mount Package Saves Board Space

NTMD6601NR2G Applications

* ăLCD Displays MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Rating Symbol Value Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note

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