* Ultra
* Low RDS(on), Single Base, Advanced Technology
* SPICE Parameters Available
* Diode is Characterized for Use in Bridge Circuits
* IDSS and VDS(on) Specified at Elevated Temperatures
* High Avalanche Energy Capability
* ESD JEDAC Rated HB
NTP75N03-06 Datasheet (71.01 KB)
NTP75N03-06
71.01 KB
Power mosfet.
NTP75N03
*06, NTB75N03
*06
Power MOSFET 75 Amps, 30 Volts
N
*Channel TO
*220 and D2PAK
This 20 VGS gate drive vertical Po.
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