Part number:
NTTFS4C06N
Manufacturer:
File Size:
190.23 KB
Description:
N-channel power mosfet.
NTTFS4C06N Datasheet (190.23 KB)
* Low RDS(on) to Minimize Conduction Losses
* Low Capacitance to Minimize Driver Losses
* Optimized Gate Charge to Minimize Switching Losses
* These Devices are Pb
* Free, Halogen Free/BFR Free and are RoHS Compliant Applications
* DC
* DC Converte
NTTFS4C06N Datasheet (190.23 KB)
NTTFS4C06N
190.23 KB
N-channel power mosfet.
📁 Related Datasheet
NTTFS4C05N - Power MOSFET
(ON Semiconductor)
NTTFS4C05N
MOSFET – Power, Single, N-Channel, m8FL
30 V, 75 A
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Dri.
NTTFS4C05NTAG - Power MOSFET
(ON Semiconductor)
NTTFS4C05N Power MOSFET
Features
30 V, 75 A, Single N−Channel, m8FL
• • • •
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Dri.
NTTFS4C05NTWG - Power MOSFET
(ON Semiconductor)
NTTFS4C05N Power MOSFET
Features
30 V, 75 A, Single N−Channel, m8FL
• • • •
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Dri.
NTTFS4C08N - Power MOSFET
(ON Semiconductor)
NTTFS4C08N
MOSFET – Power, Single, N-Channel, m8FL
30 V, 52 A
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Dri.
NTTFS4C10N - Power MOSFET
(ON Semiconductor)
NTTFS4C10N
MOSFET – Power, Single,
N-Channel, m8FL
30 V, 44 A
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Dri.
NTTFS4C13N - Power MOSFET
(ON Semiconductor)
NTTFS4C13N
MOSFET – Power, Single, N-Channel, m8FL
30 V, 38 A
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Dri.
NTTFS4C25N - Power MOSFET
(ON Semiconductor)
NTTFS4C25N
MOSFET – Power, Single, N-Channel, m8FL
30 V, 27 A
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Dri.
NTTFS4800N - Power MOSFET
(ON Semiconductor)
NTTFS4800N
Power MOSFET
30 V, 32 A, Single N−Channel, m8FL
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver.
