NTUD3171PZ Datasheet | onsemi

NTUD3171PZ Small Signal MOSFET - 20 V, - 200 m A, Dual P- Channel, 1.0 x 1.0 mm SOT- 963 Package Features .. - Dual P- Channel MOSFET - Offers a Low RDS(on) Solution in the Ultra Small 1.0 x 1.0 mm - - - http://onsemi. Package 1.5 V Gate Voltage Rating Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin Environments such as Portable Electronics. This is a Pb- Free Device V(BR)DSS RDS(ON) MAX 5.0 W @ - 4.5 V 6.0 W @ - 2.5 V 7.0 W @ - 1.8 V 10 W @ - 1.5 V D1 ID Max - 20 V - 0.2 A Applications D2 - High Side Switch - High Speed Interfacing - Optimized for Power Management in Ultra Portable Equipment MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Drain- to- Source Voltage Gate- to- Source Voltage Continuous Drain Current (Note 1) Steady State tv5s Power Dissipation (Note 1) Pulsed Drain Current Steady State tv5s tp = 10 ms IDM TJ, TSTG IS TL Operating Junction and Storage Temperature Source Current (Body Diode) (Note 2) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TA = 25°C TA = 85°C TA = 25°C TA = 25°C PD - 200 - 600 - 55 to 150 - 200 260 m A °C m A °C ID Symbol VDSS VGS...