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NTY100N10 Power MOSFET

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Description

NTY100N10 Preferred Device Power MOSFET 123 A, 100 V N *Channel Enhancement *Mode TO264 Package .

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Features

* Source
* to
* Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
* Avalanche Energy Specified
* IDSS and RDS(on) Specified at Elevated Temperature
* Pb
* Free Package is Available

Applications

* PWM Motor Control
* Power Supplies
* Converters MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain
* Source Voltage Drain
* Gate Voltage (RGS = 1 MW) Gate
* Source Voltage
* Continuous
* Non
* Repet

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