NTZD3156C - Small Signal MOSFET

ON Semiconductor

Datasheet Details

www. DataSheet4U. com http://onsemi. com ID Max (Note 1) 540 mA.
Leading Trench Technology for Low RDS(on) Performance High Efficiency System Performance Low Threshold Voltage Integrated G.
S Resistor on Both Devices ESD Protected Gate Small Footprint 1.6 x 1.6 mm These are Pb.
Free Devices V(BR)DSS N.
Channel 20 V RDS(on) Max 0.55 W @ 4.5 V 0.7 W @ 2.5 V 0.9 W @ 1.8 V 0.9 W @.
4.5 V 1.2 W @.

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Published: Mar 21, 2010 |