NVH025N65S3
Description
Super FET III MOSFET is On semiconductor’s brand- new high voltage super- junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on- resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss provide superior switching performance, and with- stand extreme dv/dt rate. Consequently, Super FET III MOSFET Easy- drive series helps manage EMI issues and allows for easier design implementation.
Features
- AEC- Q101 Qualified
- Max Junction Temperature 150°C
- Typ. RDS(on) = 19.9 mΩ
- Ultra Low Gate Charge (Typ. QG = 236 n C)
- Low Effective Output Capacitance (Typ. COSS(eff.) = 2062 p F)
- 100% Avalanche Tested
Typical Applications
- Automotive PHEV- BEV DC- DC Converter
- Automotive Onboard Charger for PHEV- BEV
.onsemi.
BVDSS 650 V
RDS(on) MAX 25 mΩ @ 10 V
ID MAX 75 A
S N-Channel MOSFET
TO- 247- 3LD CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K NVH 025N65S3
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