NVH4L015N065SC1 SiC MOSFET

ON Semiconductor

Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * 12 mohm, 650 V, M2, TO-247-4L NVH4L015N065SC1 .

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Datasheet Specifications

Part number: NVH4L015N065SC1
Manufacturer: ON Semiconductor ↗
File Size: 327.76 KB
Datasheet: NVH4L015N065SC1-ONSemiconductor.pdf
Description: SiC MOSFET

Features

* Typ. RDS(on) = 12 mW @ VGS = 18 V Typ. RDS(on) = 15 mW @ VGS = 15 V
* Ultra Low Gate Charge (QG(tot) = 283 nC)
* High Speed Switching with Low Capacitance (Coss = 430 pF)
* 100% Avalanche Tested
* AEC
* Q101 Qualified and PPAP Capable
* This De

Applications

* Automotive On Board Charger
* Automotive DC-DC Converter for EV/HEV
* Automotive Traction Inverter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage VDSS 650 V Gate
* to
* Source Voltag

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