NVH4L018N075SC1

SiC MOSFET

ON Semiconductor

NVH4L018N075SC1 Features

* Typ. RDS(on) = 13.5 mW @ VGS = 18 V Typ. RDS(on) = 18 mW @ VGS = 15 V

* Ultra Low Gate Charge (QG(tot) = 262 nC)

* High Speed Switching with Low Capacitance (Coss = 365 pF)

* 100% Avalanche Tested

* AEC

* Q101 Qualified and PPAP Capable

* This

NVH4L018N075SC1 Datasheet (327.23 KB)

NVH4L018N075SC1 Datasheet Preview — Preview of NVH4L018N075SC1 PDF

Datasheet Details

Part number:

NVH4L018N075SC1

Manufacturer:

ON Semiconductor ↗

File Size:

327.23 KB

Description:

Sic mosfet.
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET

* 13.5 mohm, 750 V, M2, TO-247-4L NVH4L018N075SC1 V(BR)DSS 750 V RDS(ON) MAX 18 mW @.

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NVH4L018N075SC1 SiC MOSFET ON Semiconductor

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