NVH4L018N075SC1 Datasheet - ON Semiconductor

NVH4L018N075SC1 - SiC MOSFET

NVH4L018N075SC1 Features

* Typ. RDS(on) = 13.5 mW @ VGS = 18 V Typ. RDS(on) = 18 mW @ VGS = 15 V

* Ultra Low Gate Charge (QG(tot) = 262 nC)

* High Speed Switching with Low Capacitance (Coss = 365 pF)

* 100% Avalanche Tested

* AEC

* Q101 Qualified and PPAP Capable

* This

Datasheet Details

NVH4L018N075SC1

327.23 KB

Sic mosfet.

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