* Typ. RDS(on) = 13.5 mW @ VGS = 18 V Typ. RDS(on) = 18 mW @ VGS = 15 V
* Ultra Low Gate Charge (QG(tot) = 262 nC)
* High Speed Switching with Low Capacitance (Coss = 365 pF)
* 100% Avalanche Tested
* AEC
* Q101 Qualified and PPAP Capable
* This
NVH4L018N075SC1 Datasheet (327.23 KB)
NVH4L018N075SC1
327.23 KB
Sic mosfet.
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET 13.5 mohm, 750 V, M2, TO-247-4L NVH4L018N075SC1 V(BR)DSS 750 V RDS(ON) MAX 18 mW @.
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