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NVH4L020N120SC1 SiC MOSFET

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Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * 20 mohm, 1200 V, M1, TO-247-4L NVH4L020N120SC1 .

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Features

* Typ. RDS(on) = 20 mW
* Ultra Low Gate Charge (QG(tot) = 220 nC)
* High Speed Switching with Low Capacitance (Coss = 258 pF)
* 100% Avalanche Tested
* AEC
* Q101 Qualified and PPAP Capable
* This Device is Halide Free and RoHS Compliant with exe

Applications

* Automotive On Board Charger
* Automotive DC-DC Converter for EV/HEV
* Automotive Traction Inverter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage VDSS 1200 V Gate
* to
* Source Volta

NVH4L020N120SC1 Distributors

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