NVH4L020N120SC1 Datasheet - ON Semiconductor

NVH4L020N120SC1 - SiC MOSFET

NVH4L020N120SC1 Features

* Typ. RDS(on) = 20 mW

* Ultra Low Gate Charge (QG(tot) = 220 nC)

* High Speed Switching with Low Capacitance (Coss = 258 pF)

* 100% Avalanche Tested

* AEC

* Q101 Qualified and PPAP Capable

* This Device is Halide Free and RoHS Compliant with exe

Datasheet Details

NVH4L020N120SC1

358.17 KB

Sic mosfet.

NVH4L020N120SC1 Distributor

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