Datasheet Details
- Part number
- NVH4L020N120SC1
- Manufacturer
- ON Semiconductor ↗
- File Size
- 358.17 KB
- Datasheet
- NVH4L020N120SC1-ONSemiconductor.pdf
- Description
- SiC MOSFET
NVH4L020N120SC1 Description
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * 20 mohm, 1200 V, M1, TO-247-4L NVH4L020N120SC1 .
NVH4L020N120SC1 Features
* Typ. RDS(on) = 20 mW
* Ultra Low Gate Charge (QG(tot) = 220 nC)
* High Speed Switching with Low Capacitance (Coss = 258 pF)
* 100% Avalanche Tested
* AEC
* Q101 Qualified and PPAP Capable
* This Device is Halide Free and RoHS Compliant with exe
NVH4L020N120SC1 Applications
* Automotive On Board Charger
* Automotive DC-DC Converter for EV/HEV
* Automotive Traction Inverter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain
* to
* Source Voltage
VDSS
1200
V
Gate
* to
* Source Volta
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