NVH4L022N120M3S Datasheet - ON Semiconductor

NVH4L022N120M3S, SiC MOSFET

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L NVH4L022N120M3S .

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Datasheet Details

Part number:

NVH4L022N120M3S

Manufacturer:

ON Semiconductor ↗

File Size:

442.98 KB

Description:

SiC MOSFET

Features

* Typ. RDS(on) = 22 mW @ VGS = 18 V
* Ultra Low Gate Charge (QG(tot) = 137 nC)
* High Speed Switching with Low Capacitance (Coss = 146 pF)
* 100% Avalanche Tested
* AEC
* Q101 Qualified and PPAP Capable
* This Device is Halide Free and RoHS Compl

Applications

* Automotive On Board Charger
* Automotive DC-DC Converter for EV/HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage VDSS 1200 V Gate
* to
* Source Voltage VGS
* 10/+22 V Recommended

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