NVH4L022N120M3S Datasheet - ON Semiconductor

NVH4L022N120M3S - SiC MOSFET

NVH4L022N120M3S Features

* Typ. RDS(on) = 22 mW @ VGS = 18 V

* Ultra Low Gate Charge (QG(tot) = 137 nC)

* High Speed Switching with Low Capacitance (Coss = 146 pF)

* 100% Avalanche Tested

* AEC

* Q101 Qualified and PPAP Capable

* This Device is Halide Free and RoHS Compl

Datasheet Details

NVH4L022N120M3S

442.98 KB

Sic mosfet.

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