Datasheet Details
- Part number
- NVH4L022N120M3S
- Manufacturer
- ON Semiconductor ↗
- File Size
- 442.98 KB
- Datasheet
- NVH4L022N120M3S-ONSemiconductor.pdf
- Description
- SiC MOSFET
NVH4L022N120M3S Description
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L NVH4L022N120M3S .
NVH4L022N120M3S Features
* Typ. RDS(on) = 22 mW @ VGS = 18 V
* Ultra Low Gate Charge (QG(tot) = 137 nC)
* High Speed Switching with Low Capacitance (Coss = 146 pF)
* 100% Avalanche Tested
* AEC
* Q101 Qualified and PPAP Capable
* This Device is Halide Free and RoHS Compl
NVH4L022N120M3S Applications
* Automotive On Board Charger
* Automotive DC-DC Converter for EV/HEV
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain
* to
* Source Voltage
VDSS
1200
V
Gate
* to
* Source Voltage
VGS
* 10/+22 V
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