NVJS4151P Trench Power MOSFET

ON Semiconductor

Description

NVJS4151P MOSFET * Power, Single P-Channel, Trench, SC-88 -20 V, -4.1 A .

📥 Download Datasheet

NVJS4151P Datasheet Preview — Preview of NVJS4151P PDF

Datasheet Specifications

Part number: NVJS4151P
Manufacturer: ON Semiconductor ↗
File Size: 201.22 KB
Datasheet: NVJS4151P-ONSemiconductor.pdf
Description: Trench Power MOSFET

Features

* Leading Trench Technology for Low RDS(ON) Extending Battery Life
* SC
* 88 Small Outline (2x2 mm) for Maximum Circuit Board Utilization, Same as SC
* 70
* 6
* Gate Diodes for ESD Protection
* AEC
* Q101 Qualified and PPAP Capable
* Th

Applications

* High Side Load Switch
* Cell Phones, Computing, Digital Cameras, MP3s and PDAs MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain
* to
* Source Voltage VDSS
* 20 V Gate
* to
* Source Voltage VGS ±12 V Con

NVJS4151P Distributors

📁 Related Datasheet

📌 All Tags

NVJS4151P Trench Power MOSFET ON Semiconductor

ON Semiconductor NVJS4151P-like datasheet