Part number:
NVMS5P02R2G
Manufacturer:
File Size:
118.34 KB
Description:
Power mosfet.
NVMS5P02R2G Datasheet (118.34 KB)
* High Density Power MOSFET with Ultra Low RDS(on) Providing Higher Efficiency
* Miniature SOIC
* 8 Surface Mount Package
* Saves Board Space
* Diode Exhibits High Speed with Soft Recovery
* IDSS Specified at Elevated Temperature
* Drain
NVMS5P02R2G Datasheet (118.34 KB)
NVMS5P02R2G
118.34 KB
Power mosfet.
📁 Related Datasheet
NVMS5P02 - Power MOSFET
(ON Semiconductor)
NTMS5P02, NVMS5P02
Power MOSFET -5.4 Amps, -20 Volts
P−Channel Enhancement−Mode Single SOIC−8 Package
Features
• High Density Power MOSFET with Ultra.
NVMS4816N - Power MOSFET
(ON Semiconductor)
NTMS4816N, NVMS4816N
Power MOSFET
30 V, 11 A, N−Channel, SO−8
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driv.
NVMSD6N303 - Power MOSFET
(ON Semiconductor)
NTMSD6N303, NVMSD6N303
Power MOSFET
6 Amps, 30 Volts N−Channel SO−8 FETKYt
The FETKY product family incorporates low RDS(on) MOSFETs packaged with an.
NVM3060 - 4096-Bit EEPROM
(ETC)
NVM 3060 4096-Bit EEPROM
Edition Feb. 14, 1990 6251-309-2/E
ITT Semiconductors
NVM 3060
Contents Page 3 4 4 4 4 5 5 5 5 7 8 8 8 8 8 9 9 9 9 10 Sect.
NVMD3P03 - P-Channel Power MOSFET
(ON Semiconductor)
.
NVMD4N03 - N-Channel MOSFET
(ON Semiconductor)
NTMD4N03, NVMD4N03
MOSFET – Power, Dual, N-Channel, SO-8
4 A, 30 V
Features
• Designed for use in low voltage, high speed switching applications • U.
NVMD6N03R2 - Power MOSFET
(ON Semiconductor)
NTMD6N03R2, NVMD6N03R2
MOSFET – Power, Dual, N-Channel, SOIC-8
30 V, 6 A
Features
• Designed for use in low voltage, high speed switching applicatio.
NVMD6N04 - Power MOSFET
(ON Semiconductor)
NTMD6N04, NVMD6N04
Power MOSFET
40 V, 5.8 A, Dual N−Channel SOIC−8
Features
• Designed for use in low voltage, high speed switching applications • Ul.
