NVVR26A120M1WSS - SiC Module

ON Semiconductor

NVVR26A120M1WSS Datasheet Preview — Preview of NVVR26A120M1WSS PDF

Datasheet Details

Part number	NVVR26A120M1WSS
Manufacturer	ON Semiconductor ↗
File Size	608.08 KB
Description	SiC Module
Datasheet	NVVR26A120M1WSS-ONSemiconductor.pdf

NVVR26A120M1WSS Product details

Description

The NVVR26A120M1WSS is part of the EliteSiC power module for traction inverter, a revolutionary high mobility compound semiconductor product family that offers increased performance, better efficiency, and higher power density in similar and highly compatible packaging solutions.The module integrates 1200 V SiC MOSFET in a half bridge configuration.

Features

Ultra Low RDS(on).
Aluminum Nitride Isolator.
Ultra.
low Stray Inductance ~ 7.1 nH.
Tvj. Max = 175°C for Continuous Operation.
Automotive Grade SiC MOSFET Chip Technologies.
Sintered Die Technology for High Reliability Performance.
Automotive Module AQG324 Compliant.
PPAP Capable.

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