NVVR26A120M1WSS SiC Module

ON Semiconductor

Description

Silicon Carbide (SiC) Module * EliteSiC Power Module for Traction Inverter, Single-Side Cooling, 2.6 mohm, 1200 V, Half-Bridge, 905 Power Tabs.
The NVVR26A120M1WSS is part of the EliteSiC power module for traction inverter, a revolutionary high mobility compound semiconductor product family th.

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Datasheet Specifications

Part number: NVVR26A120M1WSS
Manufacturer: ON Semiconductor ↗
File Size: 608.08 KB
Datasheet: NVVR26A120M1WSS-ONSemiconductor.pdf
Description: SiC Module

Features

* Ultra Low RDS(on)
* Aluminum Nitride Isolator
* Ultra
* low Stray Inductance ~ 7.1 nH
* Tvj. Max = 175°C for Continuous Operation
* Automotive Grade SiC MOSFET Chip Technologies
* Sintered Die Technology for High Reliability Performance

Applications

* Automotive EV/HEV
* Traction Inverter DATA SHEET www. onsemi. com AHPM15
* CDI MODULE CASE MODHN MARKING DIAGRAM BOTTOM SIDE ZZZ ATYWW K2R261S NNNNNNN ZZZ = Assembly Lot Code K2R261S = Marking Value AT = Assembly & Test Location Y = Year WW = Work Week NNNN = Seri

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