SFT1452 - N-Channel Power MOSFET

ON Semiconductor

Datasheet Details

ON-resistance RDS(on)=1.8W(typ. ).
Halogen free compliance.
Input Capacitance Ciss=210pF(typ. ).
10V drive.
ESD Diode-Protected Gate Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Power Dissipation PD Junction Temperature Storage Temperature Tj Tstg Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 250 ±30.

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