SZESD9R3.3S Datasheet - ON Semiconductor

SZESD9R3.3S ESD Protection Diode

of survivability specs.  Semiconductor Components Industries, LLC, 2013 1 February, 2024 * Rev. 3 Publication Order Number: ESD9R3.3S/D ESD9R3.3S, SZESD9R3.3S ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC .

DATA SHEET www.onsemi.com ESD Protection Diode Ultra Low Capacitance ESD9R3.3S, SZESD9R3.3S The ESD9R is designed to provide ESD protection for ASSPs and ASICs used in ultra low current applications such as human body sensors. These devices have been designed for leakage under 1 nA from 0C to 50C when turned off. During an ESD event, these devices turn on to clamp the ESD to a safe voltage level for the IC. These devices have the added benefits of low capacitance for high speed dat.

SZESD9R3.3S Features

* Ultra

* Low Leakage < 1 nA

* Ultra

* Low Capacitance 0.5 pF

* Low Clamping Voltage

* Small Body Outline Dimensions: 0.039

* x 0.024

* (1.00 mm x 0.60 mm)

* Low Body Height: 0.016

* (0.4 mm)

* Stand