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Si3443DV

P-Channel MOSFET

Si3443DV Features

* • -4 A, -20 V. RDS(ON) = 0.065 Ω @ VGS = -4.5 V RDS(ON) = 0.100 Ω @ VGS = -2.5 V • Fast switching speed. • Low gate charge (7.2nC typical). • High performance trench technology for extremely low RDS(ON). • SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick

Si3443DV General Description

This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipati.

Si3443DV Datasheet (225.98 KB)

Preview of Si3443DV PDF

Datasheet Details

Part number:

Si3443DV

Manufacturer:

ON Semiconductor ↗

File Size:

225.98 KB

Description:

P-channel mosfet.

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Si3443DV P-Channel MOSFET ON Semiconductor

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