TIG065E8 - N-Channel IGBT

ON Semiconductor

Datasheet Details

Low-saturation voltage.
Enhansment type.
Mounting Height 0.9mm, Mounting Area 8.12mm2.
Halogen free compliance.
Low voltage drive (2.5V).
Built-in Gate-to-Emitter protection diode.
dv / dt guarantee.
Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Collector-to-Emitter Voltage Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) Collector Current (Pulse) Maximum Collector-to-E.

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Published: Jan 25, 2016 |