MJF13007 Datasheet - ON

MJF13007 POWER TRANSISTOR

ON Semiconductort SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high voltage, high speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. VCEO(sus) 400 V Reverse Bias SOA with Inductive Loads @ TC = 100°C

MJF13007 Features

* SWITCHING VCC 1 µF 150ĂΩ 3ĂW 100ĂΩ 3ĂW MPF930 MPF930 +10ĂV 50ĂΩ 500 µF Voff MUR105 MJE210 150ĂΩ 3ĂW MTP12N10 1 µF RB1 RB2 A IB IB TUT IC 5.1 k VCE 51 D 1 -Ă4 V MTP8P10 MTP8P10 100 µF L MUR8100E Vclamp = 300 Vdc +125 V RC RB TUT SCOPE RESISTIVE SWITCHING +15Ă V TEST CIRCUITS COMMON V(BR)CEO(sus)

MJF13007_ONSemiconductor.pdf