MMBFJ309 Datasheet - ON

MMBFJ309 JFET VHF/UHF Amplifier Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBFJ309LT1/D JFET VHF/UHF Amplifier Transistor N Channel 3 GATE MMBFJ309LT1 MMBFJ310LT1 2 SOURCE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain Source Voltage Gate Source Voltage Gate Current Symbol VDS VGS IG Value 25 25 10 Unit Vdc Vdc mAdc 2 CASE 318 08, STYLE 10 SOT 23 (TO 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR 5 Board(1) TA = 25.

MMBFJ309 Features

* the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C.

* The soldering temperature and time shall not exceed 260°C for more than 10 seconds.

* When shifting from preheating t

MMBFJ309_ONSemiconductor.pdf