NTD60N02R
Features
- Planar HD3e Process for Fast Switching Performance
- Low RDS(on) to Minimize Conduction Loss
- Low Ciss to Minimize Driver Loss
- Low Gate Charge
- Optimized for High Side Switching Requirements in
High- Efficiency DC- DC Converters
- Pb- Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain- to- Source Voltage
Gate- to- Source Voltage
- Continuous
Thermal Resistance Junction- to- Case
Total Power Dissipation @ TC = 25°C Drain Current
Continuous @ TC = 25°C, Chip Continuous @ TC = 25°C, Limited by Package Continuous @ TA = 25°C, Limited by Wires
VDSS
Rq JC PD
ID ID ID
25 Vdc
±20 Vdc
2.6 °C/W 58 W
62 A 50 A 32 A
Thermal Resistance Junction- to- Ambient (Note 1)
Total Power Dissipation @ TA = 25°C Drain Current
- Continuous @ TA = 25°C
Thermal Resistance Junction- to- Ambient (Note 2)
Total Power Dissipation @ TA = 25°C Drain Current
- Continuous @ TA = 25°C
Operating and Storage Temperature
Rq JA PD
80 C/W 1.87 W 10.5...
