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N25S830HA - 256 kb Low Power Serial SRAMs

General Description

I A low level selects the device and a high level puts the device in standby mode.

high during a program cycle, the cycle will complete and then the device will enter standby mode.

Z.

Key Features

  • Power Supply Range: 2.7 to 3.6 V.
  • Very Low Standby Current: Typical Isb as low as 1 mA.
  • Very Low Operating Current: As low as 3 mA.
  • Simple Memory Control: Single chip select (CS) Serial input (SI) and serial output (SO).
  • Flexible Operating Modes: Word read and write Page mode (32 word page) Burst mode (full array).
  • Organization: 32 K x 8 bit.
  • Self Timed Write Cycles.
  • Built.
  • in Write Protection (CS High).
  • HOL.

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Datasheet Details

Part number N25S830HA
Manufacturer onsemi
File Size 91.56 KB
Description 256 kb Low Power Serial SRAMs
Datasheet download datasheet N25S830HA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N25S830HA 256 kb Low Power Serial SRAMs 32 k x 8 Bit Organization Introduction The ON Semiconductor serial SRAM family includes several integrated memory devices including this 256 kb serially accessed Static Random Access Memory, internally organized as 32 k words by 8 bits. The devices are designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high−speed performance and low power. The devices operate with a single chip select (CS) input and use a simple Serial Peripheral Interface (SPI) serial bus. A single data in and data out line is used along with a clock to access data within the devices. The N25S830HA devices include a HOLD pin that allows communication to the device to be paused. While paused, input transitions will be ignored.