G6B Datasheet, Relay, Omron Electronics

PDF File Details

Part number:

G6B

Manufacturer:

Omron Electronics

File Size:

2.39MB

Download:

📄 Datasheet

Description:

Pcb power relay.

G6B Application

• Applications of control equipments
• Model Number Legend G6B@-@@@@@-@-@-@-@-@-@ 1 2 3 4 5 6 7 8 9 10 11 1. Relay Function None: Single-si

TAGS

G6B

Omron Electronics

📁 Related Datasheet

G601 - Manual Reset IC (Global Mixed-mode Technology)
Global Mixed-mode Technology G601 Manual Reset IC with Adjustable Deglitch Time Features „ Manual Reset Input with Adjustable Manual Re set Deglitc.

G60N04 - MOSFET (GOFORD)
GOFORD Description The G60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide .

G60N04 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N04K N-Channel Enhancement Mode Power MOSFET Description The G60N04K uses advanced trench technology to provide excellent RDS(ON) , low gate char.

G60N04D52 - Dual N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N04D52 Dual N-Channel Enhancement Mode Power MOSFET Description The G60N04D52 uses advanced trench technology to provide excellent RDS(ON) , low.

G60N04K - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N04K N-Channel Enhancement Mode Power MOSFET Description The G60N04K uses advanced trench technology to provide excellent RDS(ON) , low gate char.

G60N06 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N06T N-Channel Enhancement Mode Power MOSFET Description The G60N06T uses advanced trench technology to provide excellent RDS(ON) , low gate cha.

G60N06T - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N06T N-Channel Enhancement Mode Power MOSFET Description The G60N06T uses advanced trench technology to provide excellent RDS(ON) , low gate cha.

G60N10 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N10T N-Channel Enhancement Mode Power MOSFET Description The G60N10T uses advanced trench technology to provide excellent RDS(ON) , low gate char.

G60N100 - NPT IGBT (Fairchild Semiconductor)
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE.

G60N100BNTD - NPT IGBT (Fairchild Semiconductor)
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE.