C3195 Datasheet - PACO

C3195, NPN Silicon Epitaxial Planar Transistor

CSD18533KCS www.ti.com SLPS362A * SEPTEMBER 2012 * REVISED JANUARY 2013 60-V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD1.
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Features

* Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package PRODUCT SUMMARY TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate Charge Gate to Drain Drain to Source On Resist

Applications

* DC-DC Conversion Secondary Side Synchronous Rectifier Motor Control ABSOLUTE MAXIMUM RATINGS TA = 25°C VDS VGS Drain to Source Voltage Gate to Source Voltage Continuous Drain Current (Package limited), TC = 25°C ID Continuous Drain Current (Silicon limited), TC = 25°C

C3195-PACO.pdf

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Datasheet Details

Part number:

C3195

Manufacturer:

PACO

File Size:

100.51 KB

Description:

NPN Silicon Epitaxial Planar Transistor

C3195 Distributors

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C3195 NPN Silicon Epitaxial Planar Transistor PACO

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