C3195 Datasheet - PACO

C3195 NPN Silicon Epitaxial Planar Transistor

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. (1) Pulse duration ≤300μs, duty cycle ≤2% 22 RDS(on) - On-State Resistance (mΩ) 20 18 16 14 12 10 8 6 4 2 0 0 2 4 RDS(on) vs VGS VGS - Gate-to-Source Voltage (V) TC = 25°C Id = 75A TC = 125ºC Id = 75A .

C3195 Features

* Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package PRODUCT SUMMARY TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate Charge Gate to Drain Drain to Source On Resist

C3195 Datasheet (100.51 KB)

C3195 Datasheet Preview — Preview of C3195 PDF

Datasheet Details

Part number:

C3195

Manufacturer:

PACO

File Size:

100.51 KB

Description:

Npn silicon epitaxial planar transistor.

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C3195 NPN Silicon Epitaxial Planar Transistor PACO

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