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PCDP0865G1 Datasheet - PAN JIT

Silicon Carbide Schottky Barrier Diode

PCDP0865G1 Features

* TO-220AC

* Temperature Independent Switching Behavior

* High Surge Current Capability

* Positive Temperature Coefficient on VF

* Low Conduction Loss

* Zero Reverse Recovery

* High junction temperature 175 oC

* Lead free in compliance with EU RoHS 2.0

* Green molding

PCDP0865G1 Datasheet (1.82 MB)

Preview of PCDP0865G1 PDF

Datasheet Details

Part number:

PCDP0865G1

Manufacturer:

PAN JIT

File Size:

1.82 MB

Description:

Silicon carbide schottky barrier diode.

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TAGS

PCDP0865G1 Silicon Carbide Schottky Barrier Diode PAN JIT

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