PCDP0865G1 Silicon Carbide Schottky Barrier Diode

PAN JIT

Description

Silicon Carbide Schottky Barrier Diode VRRM 650 V IF 8A VF(Typ.) 1.5 V QC 15.7 nC .

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Datasheet Specifications

Part number: PCDP0865G1
Manufacturer: PAN JIT
File Size: 1.82 MB
Datasheet: PCDP0865G1-PANJIT.pdf
Description: Silicon Carbide Schottky Barrier Diode

Features

* TO-220AC
* Temperature Independent Switching Behavior
* High Surge Current Capability
* Positive Temperature Coefficient on VF
* Low Conduction Loss
* Zero Reverse Recovery
* High junction temperature 175 oC
* Lead free in compliance with EU RoHS 2.0
* Green molding

Applications

* shown on the herein document are examples of standard use and operation. Customers are responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no representation or warranty that such applications will be suitable for the specified use without further

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PCDP0865G1 Silicon Carbide Schottky Barrier Diode PAN JIT

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