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PCDP0865G1 - Silicon Carbide Schottky Barrier Diode

PCDP0865G1 Description

Silicon Carbide Schottky Barrier Diode VRRM 650 V IF 8A VF(Typ.) 1.5 V QC 15.7 nC .

PCDP0865G1 Features

* TO-220AC
* Temperature Independent Switching Behavior
* High Surge Current Capability
* Positive Temperature Coefficient on VF
* Low Conduction Loss
* Zero Reverse Recovery
* High junction temperature 175 oC
* Lead free in compliance with EU RoHS 2.0
* Green molding

PCDP0865G1 Applications

* shown on the herein document are examples of standard use and operation. Customers are responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no representation or warranty that such applications will be suitable for the specified use without further

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Datasheet Details

Part number
PCDP0865G1
Manufacturer
PAN JIT
File Size
1.82 MB
Datasheet
PCDP0865G1-PANJIT.pdf
Description
Silicon Carbide Schottky Barrier Diode

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Silicon Carbide Schottky Barrier Diode PAN JIT
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