PCDP15120G1 Silicon Carbide Schottky Barrier Diode

PANJIT

Description

Silicon Carbide Schottky Barrier Diode VRRM 1200 V IF 15 A VF(Typ.) 1.5 V QC 67 nC .

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Datasheet Specifications

Part number: PCDP15120G1
Manufacturer: PANJIT
File Size: 1.75 MB
Datasheet: PCDP15120G1-PANJIT.pdf
Description: Silicon Carbide Schottky Barrier Diode

Features

* TO-220AC
* Temperature Independent Switching Behavior
* High Surge Current Capability
* Positive Temperature Coefficient on VF
* Low Conduction Loss
* Zero Reverse Recovery
* High junction temperature 175 oC
* Lead free in compliance with EU RoHS 2.0
* Green molding

Applications

* shown on the herein document are examples of standard use and operation. Customers are responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no representation or warranty that such applications will be suitable for the specified use without further

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PCDP15120G1 Silicon Carbide Schottky Barrier Diode PANJIT

PANJIT PCDP15120G1-like datasheet