• Part: PTA07N65B
  • Description: 650V N-ch Planar MOSFET
  • Category: MOSFET
  • Manufacturer: PIP
  • Size: 844.83 KB
Download PTA07N65B Datasheet PDF
PIP
PTA07N65B
Features - Ro HS pliant - RDS(ON),typ.=1.2 Ω@VGS=10V - Low Gate Charge Minimize Switching Loss - Fast Recovery Body Diode BVDSS 650V RDS(ON),Typ. 1.2Ω ID 7.0A Applications - Adaptor - Charger - SMPS Standby Power Ordering Information Part Number Package TO-220F Brand G DS TO-220F Package Not to Scale Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Unit VDSS VGSS Drain-to-Source Voltage Gate-to-Source Voltage 650 V ±30 Continuous Drain Current Pulsed Drain Current at VGS=10V Single Pulse Avalanche Energy Power Dissipation PD Derating Factor above 25℃ 7.0 A 550 m...