• Part: PTA27N20N
  • Description: 200V N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: PIP
  • Size: 1.54 MB
Download PTA27N20N Datasheet PDF
PIP
PTA27N20N
Features - Proprietary New Planar Technology - RDS(ON),typ.=22mΩ@VGS=10V - Low Gate Charge Minimize Switching Loss - Fast Recovery Body Diode BVDSS 200V RDS(ON),typ. 22mΩ ID 90A Applications - DC-DC Converters - DC-AC Inverters for UPS - Power Management for Inverter Systems G DS Ordering Information Part Number Package TO-220F Brand TO-220F Package Not to Scale Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Unit VDSS VGSS ID ID @ Tc =100℃ IDM EAS dv/dt TL TPAK Drain-to-Source Voltage[1] Gate-to-Source Voltage Continuous Drain Current Continuous Drain Current @ Tc=100℃ Pulsed Drain Current at VGS=10V[2] Single Pulse Avalanche Energy[5] Peak Diode Recovery dv/dt[3] Power Dissipation Derating Factor above 25℃ Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds 200 ±20 90 70 360 784 5.0 45 0.36 300 260 A m J V/ns W W/℃ ℃ TJ& TSTG Operating...