PTP02N03N - 30V N-Channel MOSFET
PTP02N03N Features
* Proprietary New Trench Technology
* RDS(ON),typ.=2.6 mΩ@VGS=10V
* Low Gate Charge Minimize Switching Loss
* Fast Recovery Body Diode BVDSS 30V RDS(ON),typ. 2.6mΩ ID 120A Applications
* High efficiency DC/DC Converters
* Motor Bridge Switch
* Oring FET/Load Switchi
