• Part: PTP02N03N
  • Description: 30V N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: PIP
  • Size: 506.78 KB
Download PTP02N03N Datasheet PDF
PIP
PTP02N03N
Features - Proprietary New Trench Technology - RDS(ON),typ.=2.6 mΩ@VGS=10V - Low Gate Charge Minimize Switching Loss - Fast Recovery Body Diode BVDSS 30V RDS(ON),typ. 2.6mΩ ID 120A Applications - High efficiency DC/DC Converters - Motor Bridge Switch - Oring FET/Load Switching G DS Ordering Information Part Number Package TO-220 Brand TO-220 Package Not to Scale Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGSS ID IDM EAS dv/dt TL TPAK Parameter Drain-to-Source Voltage[1] Gate-to-Source Voltage Continuous Drain Current TC=25℃ Pulsed Drain Current at VGS=10V Single Pulse Avalanche Energy Peak Diode Recovery dv/dt[3] Power Dissipation TC=25℃ Power Dissipation TA=25℃ Derating Factor above 25℃ Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds 30 ±20 120 480 135 5.0 120 0.8 0.031 300 260 Unit V A m J V/ns W W/℃ ℃ TJ& TSTG Operating and Storage Temperature...