• Part: SPTF60R70FD
  • Description: 600V N-ch Multi-Epi Super-Junction MOSFET
  • Category: MOSFET
  • Manufacturer: PIP
  • Size: 727.73 KB
Download SPTF60R70FD Datasheet PDF
PIP
SPTF60R70FD
Features - Proprietary New Super-Junction Technology - RDS(ON),typ.=65 mΩ@VGS=10V - Low Gate Charge Minimize Switching Loss - Fast Recovery Body Diode Applications - Adaptor - Charger - SMPS Standby Power - Switching Voltage Regulators Ordering Information Part Number Package SPTF60R70FD TO-247 Brand BVDSS 600V RDS(ON),typ. 0.065Ω ID 47A TO-247 Package Not to Scale Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value Unit VDSS VGSS Drain-to-Source Voltage Gate source voltage (static) 600 V ±30 Continuous Drain Current @ TC = 25ºC Continuous Drain Current @ TC = 100ºC Pulsed Drain Current at VGS=10V Single Pulse Avalanche Energy 1536 m J Power...