P3M171K2K3
PN JunctiON Semiconductor ↗
1.17 MB
N-channel enhancement mode sic mos.
P3M171K2K3 SiC MOS N-Channel Enhancement Mode
VRRM
= 1700 V
ID
=6
A
ID (100℃) = 4
A
RDS(on)
.
=1
Ω
SiC MOS P3M171K2K3 N-Channel Enhancement Mode
Features
* High Blocking Voltage with Low On-R.
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