* . All Diffused Structure . Interdigitated Amplifying Gate Configuration . Blocking capabilty up to 2500 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - Off State Device Type VDRM (1) VDSM (1) FR1000BX
FR1000BW Datasheet (170.76 KB)
FR1000BW
PST
170.76 KB
Reverse conducting thyristors.
Technical Data : CD-044 Page 1 of 3 FR1000BX（BW）Fast Switching Reverse-conducting Thyristor 2500 VDRM; 1550 A rms <.
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