Datasheet4U Logo Datasheet4U.com

R200CH20FJO Datasheet - PST

R200CH20FJO HIGH POWER THYRISTOR

R200CH20FJO Features

* . All Diffused Structure . Interdigitated Amplifying Gate Configuration . Blocking capabilty up to 2000 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - Off State Device Type VRRM (1) VDRM (1) VRSM (1)

R200CH20FJO Datasheet (163.25 KB)

Preview of R200CH20FJO PDF
R200CH20FJO Datasheet Preview Page 2 R200CH20FJO Datasheet Preview Page 3

Datasheet Details

Part number:

R200CH20FJO

Manufacturer:

PST

File Size:

163.25 KB

Description:

High power thyristor.

📁 Related Datasheet

R2000 HIGH VOLTAGE SILICON RECTIFIERS (SEMTECH)

R2000 500mA & 200mA High Voltage Silicon Rectifier (SEP ELECTRONIC)

R2000 HIGH VOLTAGE RECTIGIERS (HY)

R2000 HIGH VOLTAGE RECTIFIER (RFE)

R2000 HIGH VOLTAGE SILICON RECTIFIER (MIC)

R2000 HIGH VOLTAGE SILICON RECTIFIERS (Formosa MS)

R2000 HIGH VOLTAGE SILICON RECTIFIER (VOLTAGE RANGE 1200 to 2000 Volts CURRENT 0.2 to 0.5 Ampere) (Rectron Semiconductor)

R2000 TECHNICAL SPECIFICATIONS OF HIGH VOLTAGE SILICON RECTIFIER (Dc Components)

TAGS

R200CH20FJO HIGH POWER THYRISTOR PST

R200CH20FJO Distributor