Description
The devices are full bridge drivers to control power devices like MOS-transistors or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V.
Features
- Drives up to six IGBT/MOSFET power devices.
- All high side channels fully operate up to +600V.
- Gate drive supplies up to 18 V per channel.
- Under-voltage lockout for all channels.
- Over-current protection.
- Flexible over-temperature shutdown input.
- Advanced input filter.
- Built-in dead-time protection.
- Shoot-through (cross-conduction) protection.
- Independent Enable/disable input and fault
reporting.
- Shutdown all switches during error conditions.