Download 09N03 Datasheet PDF
PanJit Semiconductor
09N03
FEATURES - RDS(ON), VGS@10V,IDS@30A=9mΩ - RDS(ON), VGS@4.5V,IDS@30A=12mΩ - Advanced trench process technology - High Density Cell Design For Uitra Low On-Resistance - Specially Designed for DC/DC Converters and Motor Drivers - Fully Characterized Avalanche Voltage and Current - Pb free product : 99% Sn above can meet Ro HS environment substance directive request MECHANICALDATA - Case: TO-252 Molded Plastic - Terminals : Solderable per MIL-STD-202,Method 208 - Marking : 09N03 Drain Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) S ym b o l VD S VGS ID ID M TA = 2 5 O C TA = 7 5 O C PD TJ , TS T G EAS RθJ C RθJ A Li mi t 25 +20 50 240 45 26 -5 5 to + 1 5 0 130 2 .8 50 U ni t s V V A A W M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g...