Datasheet4U Logo Datasheet4U.com

BD540T

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

BD540T Features

* Plastic package has Underwriters Laboratory Flammability Classification 94V-O

* For surface mounted applications

* Low profile package

* Built-in strain relief

* Low power loss, High efficiency

* High surge capacity

* For use in low voltage h

BD540T Datasheet (42.04 KB)

Preview of BD540T PDF

Datasheet Details

Part number:

BD540T

Manufacturer:

Pan Jit International

File Size:

42.04 KB

Description:

Surface mount schottky barrier rectifiers.

📁 Related Datasheet

BD540 - PNP SILICON POWER TRANSISTORS (Power Innovations Limited)
BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designe.

BD540 - PNP Transistor (INCHANGE)
isc Silicon PNP Power Transistor BD540 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= .

BD540A - PNP SILICON POWER TRANSISTORS (Power Innovations Limited)
BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designe.

BD540A - PNP Transistor (INCHANGE)
isc Silicon PNP Power Transistor BD540A DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO=.

BD540B - PNP SILICON POWER TRANSISTORS (Power Innovations Limited)
BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designe.

BD540B - PNP Transistor (INCHANGE)
isc Silicon PNP Power Transistor BD540B DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO=.

BD540C - PNP SILICON POWER TRANSISTORS (Power Innovations Limited)
BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designe.

BD540C - PNP Transistor (INCHANGE)
isc Silicon PNP Power Transistor BD540C DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO=.

TAGS

BD540T SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS Pan Jit International

Image Gallery

BD540T Datasheet Preview Page 2

BD540T Distributor