Part number:
BD540T
Manufacturer:
Pan Jit International
File Size:
42.04 KB
Description:
Surface mount schottky barrier rectifiers.
* Plastic package has Underwriters Laboratory Flammability Classification 94V-O
* For surface mounted applications
* Low profile package
* Built-in strain relief
* Low power loss, High efficiency
* High surge capacity
* For use in low voltage h
BD540T
Pan Jit International
42.04 KB
Surface mount schottky barrier rectifiers.
📁 Related Datasheet
BD540 - PNP SILICON POWER TRANSISTORS
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Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997
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BD540A - PNP SILICON POWER TRANSISTORS
(Power Innovations Limited)
BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997
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BD540A - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
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DESCRIPTION ·DC Current Gain -
: hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO=.
BD540B - PNP SILICON POWER TRANSISTORS
(Power Innovations Limited)
BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997
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BD540B - PNP Transistor
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isc Silicon PNP Power Transistor
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DESCRIPTION ·DC Current Gain -
: hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO=.
BD540C - PNP SILICON POWER TRANSISTORS
(Power Innovations Limited)
BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997
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BD540C - PNP Transistor
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isc Silicon PNP Power Transistor
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DESCRIPTION ·DC Current Gain -
: hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO=.