Part number:
F2N60
Manufacturer:
Pan Jit International
File Size:
185.84 KB
Description:
Pjf2n60.
* 2A , 600V, RDS(ON)=4.6Ω@VGS=10V, ID=1A TO-220AB / ITO-220AB TO-220AB
* Low ON Resistance
* Fast Switching
* Low Gate Charge
* Fully Characterized Avalanche Voltage and Current
* Specially Desigened for AC Adapter, Battery Charge and SMPS
F2N60
Pan Jit International
185.84 KB
Pjf2n60.
📁 Related Datasheet
F2N60 - 2A 600V N-channel Enhancement Mode Power MOSFET
(ROUM)
2N60/F2N60/I2N60/E2N60/B2N60/D2N60 2A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs, is obtained by t.
F2N60 - 600V N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
F2N60
2.0A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC F2N60 is a N-Channel enhancement mode silicon gate power .
F2N60 - N-CHANNEL POWER MOSFET
(Red Diamond Optoelectronics)
F2N60
N- MOS /N-CHANNEL POWER MOSFET
◆:
◇Applications:Electronic Ballast Electronic Transformer Switch Mode Power Supply
◆: RoHS
◇Features:.
F2001 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F2002 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F2003 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F2004 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F2012 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
